Near-infrared dual-wavelength surface-emitting light source using InAs quantum dots resonant with vertical cavity modes
Near-infrared dual-wavelength surface-emitting light source using InAs quantum dots resonant with vertical cavity modes
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DOI：
10.35848/1347-4065/ac5b24
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发表时间：
2022-03
影响因子：
1.5
通讯作者：
Jin Oshima;N. Ozaki;H. Oda;E. Watanabe;H. Ohsato;N. Ikeda;Y. Sugimoto;R. Hogg
中科院分区：
文献类型：
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作者：
Jin Oshima;N. Ozaki;H. Oda;E. Watanabe;H. Ohsato;N. Ikeda;Y. Sugimoto;R. Hogg
我们研制了一种紧凑的双波长面发射光源，使用InAs量子点（QD）嵌入在一个垂直腔（VC）。VC被设计成具有与QD的离散发射线共振的两个光学腔模式。所制造的光源在对应于VC模式的垂直光发射中表现出显著的增强。此外，该光源表现出随着温度变化对增强的发射波长的选择性。与传统的双波长垂直外腔面发射激光器相比，这些基于QD的双波长发射器件允许实现简单的结构，因为InAs QD充当双发光材料。这些结果可以应用于简单的双波长面发射光源。
We developed a compact dual-wavelength surface-emitting light source using InAs quantum dots (QDs) embedded in a vertical cavity (VC). The VC was designed to possess two optical cavity modes that resonate with the discrete emission lines of the QDs. The fabricated light source exhibited significant enhancements in the vertical light emission corresponding to the VC modes. In addition, the light source demonstrated selectivity to the enhanced emission wavelengths with changes in temperature. Compared to conventional dual-wavelength vertical external cavity surface-emitting lasers, these QD-based dual-wavelength emission devices allow for the realization of simple structures because the InAs QDs act as dual-light-emitting materials. These results can be applied to simple dual-wavelength surface-emitting light sources.