Resonant circular photogalvanic effect in GaN/AlGaN heterojunctions
Resonant circular photogalvanic effect in GaN/AlGaN heterojunctions
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DOI：
10.1103/physrevb.78.205435
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发表时间：
2008-09
影响因子：
3.7
通讯作者：
B.Wittmann;L.E.Golub;S.N.Danilov;J.Karch;C.Reitmaier;Z.D.Kvon;N.Q.Vinh;A. F. G. Meer;B.Murdin;S.D.Ganichev
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文献类型：
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作者：
B.Wittmann;L.E.Golub;S.N.Danilov;J.Karch;C.Reitmaier;Z.D.Kvon;N.Q.Vinh;A. F. G. Meer;B.Murdin;S.D.Ganichev
在红外辐射激发的纤锌矿（0001）取向的 GaN 低维结构中观察到共振圆形光电池效应。电流是由光子角动量转移到 GaN/AlGaN 异质结中谐振子带间光学跃迁处的光激发电子而引起的。当辐射螺旋度反转时，或者在固定螺旋度下，当光子的传播方向反转时，信号反转。利用自由电子激光器 FELIX 的可调谐性，我们证明了通过子带间谐振条件扫描光子能量来改变电流方向，这与理论考虑一致。
The resonant circular photogalvanic effect is observed in wurtzite (0001)-oriented GaN low-dimensional structures excited by infrared radiation. The current is induced by angular-momentum transfer of photons to the photoexcited electrons at resonant intersubband optical transitions in a GaN/AlGaN heterojunction. The signal reverses upon the reversal of the radiation helicity or, at fixed helicity, when the propagation direction of the photons is reversed. Making use of the tunability of the free-electron laser FELIX, we demonstrate that the current direction changes by sweeping the photon energy through the intersubband resonance condition, in agreement with theoretical considerations.