Cancellation of electron and hole contributions to the Hall effect in ultrathin Bi films grown on GaAs(110)
Cancellation of electron and hole contributions to the Hall effect in ultrathin Bi films grown on GaAs(110)
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DOI：
10.1103/physrevb.105.205434
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发表时间：
2022-05
影响因子：
3.7
通讯作者：
Naoto Ito;R. Masutomi;T. Okamoto
中科院分区：
文献类型：
--
作者：
Naoto Ito;R. Masutomi;T. Okamoto
对生长在GaAs（110）衬底上的Bi2O3薄膜进行了磁输运测量。虽然在低温下观察到大的正磁阻，霍尔电阻被发现是非常小的。这是通过电子和空穴的贡献的抵消来解释的，估计电子和空穴具有接近的密度和迁移率值。通过与石墨烯的电荷中性点附近的类比，磁输运性质的狄拉克锥的形成进行了讨论。
Magnetotransport measurements have been performed on ultrathin Bi films grown on GaAs(110). While large positive magnetoresistance is observed at low temperatures, the Hall resistance is found to be extremely small. This is explained by the cancellation of contributions of electrons and holes, which are estimated to have close density and mobility values. By analogy with graphene near the charge neutral point, magnetotransport properties are discussed in relation to the formation of Dirac cones.