Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor
Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor
复制标题
使用硅双栅单电子晶体管进行旋转栅门操作
DOI：
10.1143/jjap.42.l1109
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发表时间：
2003
影响因子：
1.5
通讯作者：
Yasuo Takahashi
中科院分区：
文献类型：
--
作者：
Y. Ono;N. Zimmerman;K. Yamazaki;Yasuo Takahashi
利用硅基双栅单电子晶体管（SET）实现了单电子旋转门。每个门独立地控制通道的关闭和打开，作为SET引线，这使得单电子转移与交流栅极偏压同步。通过对双栅极施加频率f为1.01 MHz、相移为π的交流偏置，在25 K下的漏极电流-漏极电压特性中观察到以ef为单位量化的电流阶梯。
A single-electron turnstile has been demonstrated using a silicon-based dual-gate single-electron transistor (SET). Each gate independently controls the closing and opening of the channel acting as the SET lead, which enables single-electron transfer synchronized with ac gate biases. By applying ac biases to the dual gates with a frequency f of ∼1 MHz and a phase shift of π, current staircases quantized in units of ef are observed in drain current vs drain voltage characteristics at 25 K.