A Low-Power, Low-Cost Infra-Red Emitter in CMOS Technology
A Low-Power, Low-Cost Infra-Red Emitter in CMOS Technology
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DOI：
10.1109/jsen.2015.2464693
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发表时间：
2015-12-01
影响因子：
4.3
通讯作者：
Udrea, Florin
中科院分区：
文献类型：
--
作者：
Ali, Syed Zeeshan;De Luca, Andrea;Udrea, Florin
在本文中，我们介绍了一种低功耗低成本红外发射器的设计和表征，该发射器基于采用商业 1μm 绝缘体上硅 CMOS 技术制造的钨微热板。该器件在直径为 600 微米的介电薄膜内有一个直径为 250 微米的电阻加热器。我们首先介绍电热和光学器件特性、长期稳定性测量，然后演示其作为家用锅炉气体传感器的应用。该发射器的直流功耗仅为 70 mW，在 2.5-15 μm 波长范围内的总发射功率为 0.8 mW，50% 频率调制深度为 70 Hz，并且器件间具有出色的再现性。我们还比较了采用相同技术制造的两种较大的发射器（加热器尺寸为 600 和 1800 μm），它们具有更高的红外发射量，但功耗更高。最后，我们证明碳纳米管可用于显着提高发射器的热光转换效率。
In this paper, we present the design and characterization of a low-power low-cost infra-red emitter based on a tungsten micro-hotplate fabricated in a commercial 1-mu m silicon on insulator-CMOS technology. The device has a 250-mu m diameter resistive heater inside a 600-mu m diameter thin dielectric membrane. We first present electro-thermal and optical device characterization, long term stability measurements, and then demonstrate its application as a gas sensor for a domestic boiler. The emitter has a dc power consumption of only 70 mW, a total emission of 0.8 mW across the 2.5-15-mu m wavelength range, a 50% frequency modulation depth of 70 Hz, and excellent reproducibility from device-to-device. We also compare two larger emitters (heater size of 600 and 1800 mu m) made in the same technology that have a much higher infra-red emission, but at the detriment of higher power consumption. Finally, we demonstrate that carbon nanotubes can be used to significantly enhance the thermo-optical transduction efficiency of the emitter.