Simulation of quantum dead-layers in nanoscale ferroelectric tunnel junctions
Simulation of quantum dead-layers in nanoscale ferroelectric tunnel junctions
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DOI：
10.1209/epl/i2005-10219-7
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发表时间：
2005-03
期刊：
影响因子：
1.8
通讯作者：
K. Indlekofer;H. Kohlstedt
中科院分区：
文献类型：
--
作者：
K. Indlekofer;H. Kohlstedt
纳米铁电薄膜作为电子器件中的隧道势垒，为通过电子输运研究纳米铁电材料的物理提供了一种独特的可能性。本文用非平衡绿色函数方法模拟了金属-铁电-金属隧道结的电流-电压特性。我们讨论了量子效应的作用，如弗里德尔振荡，这导致偏离传统的半经典描述的接触，在这样的隧道结构。因此，我们预测一个很好的显着的磁阻开关效应，取决于铁电隧道势垒的极化状态。
The usage of nanoscale ferroelectric films as tunnel barriers in electronic devices offers a unique possibility to study the physics of ultrathin ferroelectric materials by means of electronic transport. In this letter, we simulate the current-voltage characteristics of a metal-ferroelectric-metal tunnel junction by use of a nonequilibrium Green's function approach. We discuss the role of quantum effects such as Friedel oscillations, which lead to deviations from the conventional semiclassical description of contacts in such a tunneling structure. As a consequence, we predict a well-pronounced bistable resistive switching effect, depending on the polarization state of the ferroelectric tunnel barrier.