Nature of germanium nanowire heteroepitaxy on silicon substrates
Nature of germanium nanowire heteroepitaxy on silicon substrates
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DOI：
10.1063/1.2219007
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发表时间：
2006-07
影响因子：
3.2
通讯作者：
H. Jagannathan;M. Deal;Y. Nishi;J. Woodruff;C. Chidsey;P. McIntyre
中科院分区：
文献类型：
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作者：
H. Jagannathan;M. Deal;Y. Nishi;J. Woodruff;C. Chidsey;P. McIntyre
对硅衬底上锗纳米线的异质外延生长进行了系统研究。这些研究包括样品制备、衬底取向、预退火、生长温度和锗烷分压对外延锗纳米线生长的影响。使用扫描电子显微镜和透射电子显微镜来分析所得纳米线的生长。锗纳米线主要沿 ⟨111⟩ 晶体方向生长，少数线沿 ⟨110⟩ 方向生长，无论底层硅衬底方向如何[硅（111）、（110）和（100）]。与其他三个可用的⟨111⟩方向相比，降低锗烷的分压增加了垂直于硅（111）表面的⟨111⟩纳米线的数量。纳米线的生长速率随着锗烷的分压而增加，并且随着温度的增加而增加。纳米线生长的成核密度和外延程度都...
Systematic studies of the heteroepitaxial growth of germanium nanowires on silicon substrates were performed. These studies included the effect of sample preparation, substrate orientation, preanneal, growth temperature, and germane partial pressure on the growth of epitaxial germanium nanowires. Scanning electron microscopy and transmission electron microscopy were used to analyze the resulting nanowire growth. Germanium nanowires grew predominantly along the ⟨111⟩ crystallographic direction, with a minority of wires growing along the ⟨110⟩ direction, irrespective of the underlying silicon substrate orientation [silicon (111), (110), and (100)]. Decreasing the partial pressure of germane increased the number of ⟨111⟩ nanowires normal to the silicon (111) surface, compared to the other three available ⟨111⟩ directions. The growth rate of nanowires increased with the partial pressure of germane and to a lesser degree with temperature. The nucleation density of nanowire growth and the degree of epitaxy both...