Crystallization Process of Polycrystalline Silicon by KrF Excimer Laser Annealing
Crystallization Process of Polycrystalline Silicon by KrF Excimer Laser Annealing
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KrF准分子激光退火多晶硅结晶过程
DOI：
10.1143/jjap.33.4491
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发表时间：
1994
影响因子：
1.5
通讯作者：
T. Kioka
中科院分区：
文献类型：
--
作者：
Hiroyuki Watanabe;H. Miki;S. Sugai;K. Kawasaki;T. Kioka
利用透射电子显微镜（TEM）、拉曼散射谱和二次离子质谱（西姆斯）研究了脉冲KrF准分子激光退火a-Si薄膜的晶化过程与辐照能量密度（EL）的关系。在0.2-0.4 J/cm ~ 2时，晶粒尺寸逐渐增大，而在0.6-0.8 J/cm ~ 2时，晶粒急剧增大并发生横向生长。薄膜中的应力随着细晶粒（FG）层厚度的减小而减小，直至最终消失。我们提出了一个模型，在该模型中，一个急剧扩大的晶粒在高EL控制的形核率，凝固速度，和核密度的初始生长。结果表明，在高电场强度（0.6- 0.8J/cm ~ 2）下，可以得到晶粒尺寸大（0.5-0.9 μm）、C纯度高（103 ×1016 cm ~（-3））、应力低的多晶硅薄膜。
We have investigated the crystallization of a-Si films by means of pulsed KrF excimer laser annealing as a function of irradiation energy density (E L), using transmission electron microscopy (TEM), Raman scattering spectroscopy and secondary ion mass spectrometry (SIMS). The grain size increased gradually at 0.2–0.4 J/cm2, while a drastic enlargement of grains occurred with lateral growth at 0.6–0.8 J/cm2. The stress in the films decreased with a decrease in the thickness of the fine grain (FG) layer until the FG layer finally disappeared. We proposed a model in which a drastic enlargement of grains at high E L is controlled by the nucleation rate, the solidification velocity, and the nucleus density of initial growth. It was found that poly-Si films with large grains ( 0.5–0.9 µm), high purity of C ( ∼3×1016 cm-3) and low stress were obtained in the high E L regime ( 0.6–0.8 J/cm2).