Carbon nanotube single-electron transistors at room temperature

Carbon nanotube single-electron transistors at room temperature
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DOI:
10.1126/science.1061797
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发表时间:
2001-07-06
期刊:
影响因子:
56.9
通讯作者:
Dekker, C
Dekker, C
中科院分区:
综合性期刊1区
文献类型:
--
作者:
Postma, HWC;Teepen, T;Dekker, C

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室温单电子晶体管在单个金属单壁碳纳米管分子内实现。该器件具有短(低至类似于20纳米)的纳米管部分,该部分是通过用原子力显微镜将局部势垒引入管中而创建的。在室温下观察到库仑充电,具有120毫电子伏的附加能量,这大大超过了热能。在低温下,我们解决了量子能级对应的小岛。我们观察到非常规的幂律依赖性在测量的传输特性,我们建议一个共振隧穿Luttinger液体机制。
Room-temperature single-electron transistors are realized within individual metallic single-wall carbon nanotube molecules. The devices feature a short (down to similar to 20 nanometers) nanotube section that is created by inducing Local barriers into the tube with an atomic force microscope. Coulomb charging is observed at room temperature, with an addition energy of 120 millielectron volts, which substantially exceeds the thermal energy. At Low temperatures, we resolve the quantum energy Levels corresponding to the small island. We observe unconventional power-law dependencies in the measured transport properties for which we suggest a resonant tunneling Luttinger-liquid mechanism.