A Simple Model for Separating Interface and Oxide Charge Effects in MOS Device Characteristics
A Simple Model for Separating Interface and Oxide Charge Effects in MOS Device Characteristics
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DOI：
10.1109/tns.1984.4333537
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发表时间：
1984-12
影响因子：
1.8
通讯作者：
K. Galloway;M. Gaitan;T. Russell
中科院分区：
文献类型：
--
作者：
K. Galloway;M. Gaitan;T. Russell
提出了一个简单的模型来描述MOSFET电特性的辐射效应。关键的假设是，迁移率退化的增强型MOSFET主要是由于带电的界面陷阱。模型预测值与界面陷阱密度和器件I-V曲线的测量值进行了比较.
A simple model to describe radiation effects on MOSFET electrical characteristics is presented. The key assumption is that mobility degradation in an enhancement mode MOSFET is predominantly due to charged interface traps. Model predictions are compared with measured values of interface trap density and device I - V curves.