Active Gate Drive to Increase the Power Capacity of Hard-Switched IGBTs
Active Gate Drive to Increase the Power Capacity of Hard-Switched IGBTs
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DOI：
10.1109/jestpe.2020.2986097
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发表时间：
2021-04
影响因子：
5.5
通讯作者：
Gwilym T. Jones;Y. Siwakoti;Daniel J. Rogers
中科院分区：
文献类型：
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作者：
Gwilym T. Jones;Y. Siwakoti;Daniel J. Rogers
本文研究了栅极驱动对桥腿中硬开关绝缘栅双极晶体管（IGBT）功率处理能力的影响。将两种主动栅驱动（AGD）技术[可变斜坡（VR）和推挽（PP）]与传统的两级[快速栅驱动（FGD）]栅驱动方法的性能进行了比较。这两种提出的技术减少了电压过调，这使得直流母线电压增加到更接近IGBT额定电压，提高了器件阻断电压的利用率。因此，IGBT的安全工作区域被扩展而不超过器件的热限制（受最大结温的限制）。研究人员开发了一种实验方法，以确定使用这些agd是否会导致IGBT处理功率的增加，这在文献中尚属首次。本文揭示了PP-AGD技术可以在开关频率范围内将IGBT功率吞吐量提高约5%-8%。这种更好的IGBT利用率允许给定器件处理更多功率，或者允许设计人员选择可能导致更高转换器功率密度的较低额定功率器件。
The effect of the gate drive on the power-processing capacity of a hard-switched insulated-gate bipolar transistor (IGBT) in a bridge leg is investigated in this article. The performance of two active gate drive (AGD) techniques [variable ramp (VR) and push–pull (PP)] is compared against a conventional two-level [fast gate drive (FGD)] gate drive method. The two proposed techniques reduce the voltage overshoot, which allows the dc-bus voltage to be increased closer to the IGBT voltage rating, improving the utilization of the device’s blocking voltage. Consequently, the safe operating area of the IGBT is extended without exceeding the thermal limit of the device (limited by the maximum junction temperature). An experimental method, the first of its kind in the literature, is developed to determine whether using these AGDs can lead to an increase in the power that the IGBT can process. This article reveals that the PP-AGD technique can increase the IGBT power throughput by approximately 5%–8% across a range of switching frequencies. This better IGBT utilization allows a given device to process more power or may allow the designer to choose lower power rated devices potentially leading to higher converter power density.