Chemical Doping and Electron-Hole Conduction Asymmetry in Graphene Devices
Chemical Doping and Electron-Hole Conduction Asymmetry in Graphene Devices
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DOI：
10.1021/nl803214a
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发表时间：
2009-01-01
期刊：
影响因子：
10.8
通讯作者：
Avouris, Phaedon
中科院分区：
文献类型：
--
作者：
Farmer, Damon B.;Golizadeh-Mojarad, Roksana;Avouris, Phaedon
我们调查聚（乙烯亚胺）和重氮盐作为稳定的，互补的石墨烯掺杂剂。掺杂有这些分子的石墨烯器件中的传输表现出电子和空穴电导的不对称性。一个载流子的电导保持不变，而另一个载流子的电导减小。基于非平衡绿色函数形式主义的模拟表明，这种不对称性的起源是由电极和沟道中性点的未对准引起的来自石墨烯电极的不平衡载流子注入。
We investigate poly(ethylene imine) and diazonium salts as stable, complementary dopants on graphene. Transport in graphene devices doped with these molecules exhibits asymmetry in electron and hole conductance. The conductance of one carrier is preserved, while the conductance of the other carrier decreases. Simulations based on nonequilibrium Green's function formalism suggest that the origin of this asymmetry is imbalanced carrier injection from the graphene electrodes caused by misalignment of the electrode and channel neutrality points.