Laser transfer processing for the integration of thin and thick film ferroelectrics
Laser transfer processing for the integration of thin and thick film ferroelectrics
复制标题
DOI：
10.1007/s10853-009-3609-2
复制
发表时间：
2009-06
影响因子：
4.5
通讯作者：
C. James;T. Chakraborty;Andy P. Brown;T. Comyn;R. Dorey;J. Harrington;A. Laister;R. Miles;C. Puchmark;Baomin Xu;W. Xiong;Qi Zhang;S. J. Milne
中科院分区：
文献类型：
--
作者：
C. James;T. Chakraborty;Andy P. Brown;T. Comyn;R. Dorey;J. Harrington;A. Laister;R. Miles;C. Puchmark;Baomin Xu;W. Xiong;Qi Zhang;S. J. Milne
激光转移加工 (LTP) 提供了克服铁电薄膜和厚膜材料与聚合物和其他技术上有用的基材材料集成问题的潜力，这些材料无法承受正常薄膜沉积所需的 600–1,000 °C 高加工温度。 LTP 技术涉及在蓝宝石等高温基底材料上制造陶瓷薄膜，然后通过应用脉冲紫外激光辐射进行释放。在此，我们在铁电薄膜和厚膜的背景下回顾了 LTP 技术，并介绍了当前的进展。使用扫描和透射电子显微镜揭示了转移到第二基底之前和之后薄膜的微米和纳米结构特征。说明了激光产生的结构变化对铁电特性的影响，并讨论了减轻非晶损伤层影响的措施。
Laser transfer processing (LTP) offers the potential to overcome the problems of integrating ferroelectric thin and thick film materials with polymers and other technologically useful substrate materials that cannot sustain the high process temperatures, 600–1,000 °C, required for normal film deposition. The LTP technique involves the fabrication of a ceramic film on a high-temperature substrate material such as sapphire, and subsequent release by application of pulsed ultra-violet laser radiation. Here, the LTP technique is reviewed in the context of ferroelectric thin and thick films, and current developments are presented. Micro- and nanostructural features of the films before and after transfer to a second substrate are revealed using scanning and transmission electron microscopy. The consequences of laser-generated structural changes on ferroelectric properties are illustrated, and measures to mitigate the effects of an amorphous damage-layer are discussed.