Influence of As/group-III flux ratio on defects formation and photovoltaic performance of GaInNAs solar cells
Influence of As/group-III flux ratio on defects formation and photovoltaic performance of GaInNAs solar cells
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As/III族通量比对GaInNAs太阳能电池缺陷形成和光伏性能的影响
DOI：
10.1016/j.solmat.2016.01.024
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发表时间：
2016
影响因子：
6.9
通讯作者：
M. Guina
中科院分区：
文献类型：
--
作者：
V. Polojärvi;A. Aho;A. Tukiainen;M. Raappana;T. Aho;A. Schramm;M. Guina
系统地研究了分子束外延GaIn0.1N0.03As太阳电池中As/III族通量比与光伏性能的关系。结果表明，磁通比对缺陷陷阱的形成有显著影响。此外，在不同的流量比的缺陷的形成与背景掺杂水平和光伏性能的变化相关。特别是，这项研究揭示了电流产生，暗饱和电流，缺陷密度，光致发光峰强度和通量比之间的线性依赖关系。一个显着增加的太阳能电池的性能，表现出最大的外量子效率为90%，获得当As/第III组的比例降低接近化学计量极限。在优化的生长条件下，采用870 nm高通滤光片，由外量子效率数据（AM 0条件）计算得到的1 eV GaIn0.1N0.03As太阳能电池的短路电流密度高达17.9 mA/cm 2。该值反映了GaInNAs电池在包含三个或四个结的高效太阳能电池中用于电流匹配和发电的潜力。
The correlation between the As to group III flux ratio and photovoltaic performance of GaIn0.1N0.03As solar cells fabricated by molecular beam epitaxy is systematically investigated. The results show that flux ratio has a remarkable influence on the formation of defect traps. Furthermore, the formation of defects at different flux ratios is correlating with the variation of the background doping level and the photovoltaic performance. In particular, this study reveals a linear dependency between current generation, dark saturation current, defect densities, photoluminescence peak intensity and the flux ratio. A significant increase in solar cell performance, exhibiting maximum external quantum efficiency of 90%, is obtained when As/group-III ratio is decreased close to the stoichiometric limit. For optimized growth condition, the 1 eV GaIn0.1N0.03As solar cell exhibits a short circuit current density as high as 17.9 mA/cm2calculated from the external quantum efficiency data (AM0 conditions) with 870 nm high-pass filter. This value reflects the potential of the GaInNAs cell for current matching and power generation in high efficiency solar cells incorporating three- or four- junctions.
DOI：
10.1088/0022-3727/45/36/365107
发表时间：
2012-09
期刊：
Journal of Physics D: Applied Physics
影响因子：
--
作者：
V. Polojärvi;A. Schramm;A. Aho;A. Tukiainen;M. Guina
通讯作者：
V. Polojärvi;A. Schramm;A. Aho;A. Tukiainen;M. Guina