Current-controlled magnetic domain-wall nanowire shift register
Current-controlled magnetic domain-wall nanowire shift register
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DOI：
10.1126/science.1154587
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发表时间：
2008-04-11
期刊：
影响因子：
56.9
通讯作者：
Parkin, Stuart S. P.
中科院分区：
文献类型：
--
作者：
Hayashi, Masamitsu;Thomas, Luc;Parkin, Stuart S. P.
利用自旋极化电流脉冲沿着磁性纳米线的一系列畴壁的受控运动是所提出的磁性赛道存储器的基本成分，这是一类新的潜在的非易失性存储类存储器。使用坡莫合金纳米线，我们实现了连续的创建，运动，并通过使用适当的定时，纳秒长，自旋极化电流脉冲序列检测畴壁。域壁的写入和移动周期为几十纳秒。我们的研究结果说明了磁移位寄存器的基本概念，它依赖于自旋动量转移的现象来移动一系列紧密间隔的畴壁。
The controlled motion of a series of domain walls along magnetic nanowires using spin-polarized current pulses is the essential ingredient of the proposed magnetic racetrack memory, a new class of potential non-volatile storage-class memories. Using permalloy nanowires, we achieved the successive creation, motion, and detection of domain walls by using sequences of properly timed, nanosecond-long, spin-polarized current pulses. The cycle time for the writing and shifting of the domain walls was a few tens of nanoseconds. Our results illustrate the basic concept of a magnetic shift register that relies on the phenomenon of spin-momentum transfer to move series of closely spaced domain walls.