Field crystallization of anodic films on tantalum
Field crystallization of anodic films on tantalum
复制标题
钽阳极薄膜的场结晶
DOI：
10.1007/bf00613498
复制
发表时间：
1973
影响因子：
2.9
通讯作者：
N. Jackson
中科院分区：
文献类型：
--
作者：
N. Jackson
发现钽阳极氧化过程中结晶区的径向生长速率与溶质和溶剂的性质和浓度以及电解液的pH值有关。一般来说，使用高浓度的溶质或添加某些有机溶剂会降低电解质溶液中的生长速率。结构分析表明，对于标称纯度为99.99%的光亮轧制钽箔，形核点密度约为107cm−2，其中约1%发生了活跃的径向生长。可以与杂质夹杂物相关的成核位点被认为通过窄孔保持与电解质的接触。由于非晶氧化物被生长的晶体回滚，从结晶区的顶面剥离一层厚度相对均匀的膜，并与分离的非晶氧化物保持紧密接触，本文描述了利用场结晶研究烧结粉末阳极内外表面杂质的位置和分布。
The radial growth rate of crystalline areas during the anodization of tantalum is found to be related to the nature and concentration of both the solute and the solvent and also to the pH of the electrolyte. In general, the use of high solute concentrations or the addition of certain organic solvents produces reduced growth rates in aqueous electrolytes.Structural examinations indicate that for bright rolled tantalum foil of nominal purity 99.99%, the density of nucleation sites is approximately 107cm−2, of which about 1% undergo active radial growth. The nucleation sites, which can be related to impurity inclusions, are believed to maintain contact with the electrolyte through narrow pores. As the amorphous oxide is rolled back by the growing crystals, a layer of relatively uniform thickness is stripped from the top surface of the crystalline area and remains in intimate contact with the detached amorphous oxide.The use of field crystallization to study the location and distribution of impurities at both exterior and interior surfaces of sintered powder anodes is described.