Influence of GaAs surface stoichiometry on the interface state density of as-grown epitaxial ZnSe/epitaxial GaAs heterostructures
Influence of GaAs surface stoichiometry on the interface state density of as-grown epitaxial ZnSe/epitaxial GaAs heterostructures
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DOI：
10.1063/1.102534
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发表时间：
1990-03
影响因子：
4
通讯作者：
J. Qiu;Q. Qian;R. Gunshor;M. Kobayashi;D. Menke;D. Li;N. Ōtsuka
中科院分区：
文献类型：
--
作者：
J. Qiu;Q. Qian;R. Gunshor;M. Kobayashi;D. Menke;D. Li;N. Ōtsuka
外延 ZnSe/外延 GaAs 界面已通过分子束外延形成，并通过包括电容电压测量在内的多种技术进行评估。在此报告的研究中，GaAs 表面化学计量在 ZnSe 成核之前系统地变化。当 GaAs 外延层缺乏 As 时，界面态密度会急剧降低。所得结构的界面态密度与 (Al,Ga)As/GaAs 界面获得的值相当。
Epitaxial ZnSe/epitaxial GaAs interfaces have been formed by molecular beam expitaxy and evaluated by several techniques including capacitance‐voltage measurements. In the study reported here, the GaAs surface stoichiometry was systematically varied prior to the nucleation of ZnSe. A dramatic reduction of interface state density occurred when the GaAs epilayer was made As deficient. The resulting interface state densities of as‐grown structures are comparable to values obtained with (Al,Ga)As/GaAs interfaces.