Micromachined capacitive ultrasonic transducers fabricated using silicon on insulator wafers
Micromachined capacitive ultrasonic transducers fabricated using silicon on insulator wafers
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DOI：
10.1016/s0167-9317(02)00423-9
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发表时间：
2002-07-01
影响因子：
2.3
通讯作者：
Pappalardo, M
中科院分区：
文献类型：
--
作者：
Cianci, E;Foglietti, V;Pappalardo, M
在本文中，我们提出了电容式微机械超声换能器的制造工艺，通过表面微加工技术，使用绝缘体上硅（SOI）衬底作为起始材料。SOI衬底的使用提供了具有优异机械性能的晶体硅的结构层（其中制造了独立膜）和可以相对于硅选择性蚀刻的掩埋氧化物牺牲层。我们开发的过程已经允许获得在空气中的谐振频率为6 MHz的换能器。(C)2002 Elsevier Science B.V.保留所有权利。
In this paper we present the fabrication process of capacitive micromachined ultrasonic transducers by means of surface micromachining techniques using silicon on insulator (SOI) substrates as starting material. The use of SOI substrates provides a structural layer, in which the free-standing membranes are fabricated, of crystal silicon with excellent mechanical properties, and a sacrificial layer of buried oxide that can be etched selectively with respect to silicon. The process we developed has allowed to obtain transducers with resonance frequency at 6 MHz in air. (C) 2002 Elsevier Science B.V. All rights reserved.