The role of plasma chemistry on functional silicon nitride film properties deposited at low-temperature by mixing two frequency powers using PECVD.
The role of plasma chemistry on functional silicon nitride film properties deposited at low-temperature by mixing two frequency powers using PECVD.
复制标题
通过使用 PECVD 混合两种频率功率，等离子体化学对低温沉积的功能性氮化硅薄膜特性的作用。
DOI：
10.1039/c6cp00986g
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
J. Han
中科院分区：
文献类型：
--
作者：
B. Sahu;Y. Yin;T. Tsutsumi;M. Hori;J. Han
等离子体密度和主要等离子体物质的能量的控制对于诱导等离子体反应性、化学性质和膜性质的改变是至关重要的。本工作提出了一个系统的和综合的方法来低温沉积氢化非晶氮化硅薄膜的等离子体工艺的优化和控制。射频（RF）和超高频（UHF）功率相结合，以提高显着的氮等离子体和原子自由基密度，以加强其对薄膜性能的影响。本研究提出了一个广泛的调查相结合的射频（RF）和超高频（UHF）的功率比（PR = RF：UHF）的影响，范围从4：0到0：4，合成膜的组成，结构和光学性能。数据显示，DF功率与特征双麦克斯韦电子能量分布函数（EEDF）是有效地用于增强中性粒子的电离和解离，这反过来又有助于使高速率沉积具有更好的膜性能比SF操作。利用DF PECVD，仅通过在室温下使用高密度等离子体和高氮原子密度，就可以实现具有强光致发光特性的约3.5 eV的宽带隙。目前的工作还提出了DF PECVD方法在工业应用中的适用性。
Control of the plasma densities and energies of the principal plasma species is crucial to induce modification of the plasma reactivity, chemistry, and film properties. This work presents a systematic and integrated approach to the low-temperature deposition of hydrogenated amorphous silicon nitride films looking into optimization and control of the plasma processes. Radiofrequency (RF) and ultrahigh frequency (UHF) power are combined to enhance significantly the nitrogen plasma and atomic-radical density to enforce their effect on film properties. This study presents an extensive investigation of the influence of combining radiofrequency (RF) and ultrahigh frequency (UHF) power as a power ratio (PR = RF : UHF), ranging from 4 : 0 to 0 : 4, on the compositional, structural, and optical properties of the synthesized films. The data reveal that DF power with a characteristic bi-Maxwellian electron energy distribution function (EEDF) is effectively useful for enhancing the ionization and dissociation of neutrals, which in turn helps in enabling high rate deposition with better film properties than that of SF operations. Utilizing DF PECVD, a wide-bandgap of ∼3.5 eV with strong photoluminescence features can be achieved only by using a high-density plasma and high nitrogen atom density at room temperature. The present work also proposes the suitability of the DF PECVD approach for industrial applications.