Oxygen-vacancy-induced 90° -domain clamping in ferroelectric Bi 4 Ti 3 O 12 single crystals
Oxygen-vacancy-induced 90° -domain clamping in ferroelectric Bi 4 Ti 3 O 12 single crystals
复制标题
DOI：
10.1103/physrevb.81.094114
复制
发表时间：
2010-03
影响因子：
3.7
通讯作者：
Y. Kitanaka;Y. Noguchi;M. Miyayama
中科院分区：
文献类型：
--
作者：
Y. Kitanaka;Y. Noguchi;M. Miyayama
我们用沿a(B)轴的极化测量和压电响应力显微镜研究了${\text{Bi}}_{4}{\text{Ti}}_{3}{\text{O}}_{12}$(BIT)和$({\text{Bi}}_{3.6}{\text{La}}_{0.4}){\text{Ti}}_{3}{\text{O}}_{12}$(BLT)铁电单晶中的磁畴钳制。PFM观察表明，在极化切换过程中，$90\ifmmode^\circ\Else\TextDegree\FI$磁区被钳制。氧空位较少的BIT和BLT晶体显示出低体积分数的夹持$90\ifmmode^\CIRC\Else\TextDegreyFI$磁畴。极化测量表明，夹持$90\ifmmode^\cic\Else\TextDegreyFI}$磁畴降低了BIT晶体中的剩余极化。这些实验结果和从头计算表明，$90\ifmmode^\circ\else\textdegree\fi{}$-domain壁和氧空位之间的吸引相互作用是夹持$90\ifmmode^\circ\Else\TextDegree\FI$磁畴的主要原因。
We have investigated domain clamping in ferroelectric single crystals of ${\text{Bi}}_{4}{\text{Ti}}_{3}{\text{O}}_{12}$ (BiT) and $({\text{Bi}}_{3.6}{\text{La}}_{0.4}){\text{Ti}}_{3}{\text{O}}_{12}$ (BLT) using polarization measurements along the $a(b)$ axis and piezoresponse force microscopy (PFM). PFM observations reveal that $90\ifmmode^\circ\else\textdegree\fi{}$ domains are clamped during polarization switching. The crystals of BiT with less oxygen vacancies and BLT exhibited a low volume fraction of the clamped $90\ifmmode^\circ\else\textdegree\fi{}$ domains. Polarization measurements demonstrate that the clamping of $90\ifmmode^\circ\else\textdegree\fi{}$ domains decreases the remanent polarization in BiT crystals. These experimental results and ab initio calculations show that an attractive interaction between $90\ifmmode^\circ\else\textdegree\fi{}$-domain walls and oxygen vacancies is the main origin of the clamping of $90\ifmmode^\circ\else\textdegree\fi{}$ domains.