Nanocarbon-Induced Etching Property of Semiconductor Surfaces: Testing Nanocarbon's Catalytic Activity for Oxygen Reduction Reaction at a Single-Sheet Level
Nanocarbon-Induced Etching Property of Semiconductor Surfaces: Testing Nanocarbon's Catalytic Activity for Oxygen Reduction Reaction at a Single-Sheet Level
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纳米碳诱导的半导体表面蚀刻特性：测试纳米碳对单片水平氧还原反应的催化活性
DOI：
10.1149/2162-8777/ac6117
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发表时间：
2022
影响因子：
2.2
通讯作者：
Kazuya Yamamura and Kenta Arima
中科院分区：
文献类型：
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作者：
Ayumi Ogasawara;Kentaro Kawai;Kazuya Yamamura and Kenta Arima
在燃料电池领域，对纳米碳或石墨烯基氧还原反应(ORR)的催化活性的微观了解是非常必要的。在目前的研究中，提出了一个新的概念来实现这一点，这是一种不同于常见的电化学测量的方法。为了验证这一概念，我们制备了两种纳米碳材料，并通过宏观循环伏安法和线性扫描伏安法对其ORR活性进行了测试和比较。其次，考虑到ORR的电化学势和半导体的带边位置，我们选择了单晶Ge作为分散单层纳米碳的衬底。我们发现，纳米碳/Ge样品在含氧水中浸泡后，在负载的纳米碳下面形成了刻蚀空洞。孔洞的直方图分析反映了所用纳米碳在促进Ge刻蚀方面的催化活性的差异，相应的趋势与电化学测量定性地一致。
In the field of fuel cells, the microscopic understanding of the catalytic activity of nanocarbons or graphene-based materials for oxygen reduction reaction (ORR) is highly demanded. In the current study, a novel concept is presented to achieve it, which is a different approach from familiar electrochemical measurements. To prove this concept, we prepared two nanocarbon materials, whose ORR activities were tested and compared via macroscale cyclic and linear sweep voltammetry. Next, considering the electrochemical potential of ORR and the band-edge position of semiconductors, we chose single-crystalline Ge as the substrate on which the single-sheet nanocarbons were dispersed. We found that etched hollows formed under the loaded nanocarbons after immersing the nanocarbon/Ge sample into O 2-containing water. The histogram analysis of the hollows represented the difference in catalytic activities to promote Ge etching between the used nanocarbons, and the corresponding trends agreed qualitatively with the electrochemical measurements.