Heteroepitaxial Si/Al2O3/Si structures
Heteroepitaxial Si/Al2O3/Si structures
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异质外延Si/Al2O3/Si结构
DOI：
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发表时间：
1989
期刊：
影响因子：
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通讯作者：
T. Suzaki
中科院分区：
文献类型：
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作者：
M. Ishida;K. Sawada;S. Yamaguchi;Tetsuro Nakamura;T. Suzaki
实现了双异质外延Si/γ-Al2O3/Si结构。采用Si2H6气源分子束外延技术，在衬底温度700~800°C的条件下，在(100)γ-Al2O3/(100)Si衬底上成功生长出高质量的(100)Si外延层。采用Al(CH3)3和N2O气体通过低压化学气相沉积法制备了γ-Al2O3/Si衬底。 3000埃厚的硅外延层的反射高能电子衍射图显示出条纹2×1图案。该Si薄膜具有镜面般的表面，并且从复制电子显微照片中观察到光滑的表面形态。从外延层的俄歇深度分布来看，由于生长温度较低，双异质外延Si/Al2O3/Si结构在Al2O3和外延Si薄膜之间具有更尖锐的界面。
A double‐heteroepitaxial Si/γ‐Al2O3/Si structure was realized. An epitaxial (100)Si layer with high quality was successfully grown on a (100)γ‐Al2O3/(100)Si substrate by Si2H6 gas‐source molecular beam epitaxy at substrate temperatures between 700 and 800 °C. The γ‐Al2O3/Si substrate was fabricated by low‐pressure chemical vapor deposition with Al(CH3 )3 and N2 O gases. The reflection high‐energy electron diffraction patterns of the 3000‐A‐thick Si epitaxial layer indicated streaked 2×1 patterns. This Si film had a mirror‐like surface, and smooth surface morphology was observed from replica electron micrographs. From the Auger depth profile of the epitaxial layers, it was found that the double‐heteroepitaxial Si/Al2O3/Si structure had a sharper interface between Al2 O3 and the epitaxial Si film due to the low growth temperatures.