Bulk ZnO as piezotronic pressure sensor
Bulk ZnO as piezotronic pressure sensor
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DOI：
10.1063/1.4895941
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发表时间：
2014-09-15
影响因子：
4
通讯作者：
Roedel, J.
中科院分区：
文献类型：
--
作者：
Baraki, R.;Novak, N.;Roedel, J.
研究了单轴压缩机械应力对ZnO压敏电阻陶瓷电性能的影响，并对其在压力传感器中的潜在应用进行了研究。作为温度函数的电流-电压测量受外加应力的强烈影响。单轴应力对电荷输运特性的调制导致了电阻的大变化。因此，获得了类似于800的测量因子，这大大超过了传统传感器的值。该效应归因于压电效应，即ZnO的压电性改变了晶界处的势垒。这种通过机械变形引起的晶界势垒的变化为开发更好的传感器应用材料提供了一个有前途的物理概念。(C) 2014 AIP出版有限责任公司
The impact of uniaxial compressive mechanical stress on the electrical properties of a ZnO varistor ceramic was studied with respect to a potential use in pressure sensor applications. Current-voltage measurements as a function of temperature are strongly affected by the applied stress. The modulation of charge transport properties with uniaxial stress causes large changes in resistance. Hence, a gauge factor of similar to 800 is attained, which significantly exceeds the value of conventional sensors. The effect is attributed to the piezotronic effect, i.e., the altering of the potential barrier at grain boundaries due to the piezoelectricity of ZnO. This change in grain boundary potential barriers via mechanical deformation represents a promising physical concept for the development of better materials for sensor applications. (C) 2014 AIP Publishing LLC.