Quantitative control and detection of heterovalent impurities in ZnO thin films grown by pulsed laser deposition
Quantitative control and detection of heterovalent impurities in ZnO thin films grown by pulsed laser deposition
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DOI：
10.1063/1.1542938
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发表时间：
2003-03
影响因子：
3.2
通讯作者：
M. Sumiya;S. Fuke;A. Tsukazaki;K. Tamura;A. Ohtomo;M. Kawasaki;H. Koinuma
中科院分区：
文献类型：
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作者：
M. Sumiya;S. Fuke;A. Tsukazaki;K. Tamura;A. Ohtomo;M. Kawasaki;H. Koinuma
ZnO试样中的杂质，包括脉冲激光沉积和薄膜的使用产生的目标，进行了二次离子质谱（西姆斯）分析。与氧结合的带负电荷的络合离子（71 Ga 16 O −和14 N16 O −）被认为是最可靠的物种，通过澄清西姆斯分析中可能的质量干扰效应来评估ZnO薄膜的Ga和N含量。通过将71 Ga 16 O-和14 N16 O-的信号强度分别归一化至70 Zn 16 O-的信号强度，进行校准以确定Ga浓度（CGa）和氮浓度（CN）。纯单晶和Ga掺杂的陶瓷ZnO目标的替代烧蚀被认为是有效的，不仅实现系统控制的Ga浓度在ZnO：（Ga，N）薄膜，但也为最大限度地减少不需要的杂质从烧结目标的污染。衬底温度起着决定性的作用，在控制CN由于热激活脱附过程的N-…
Impurities in ZnO specimens, including targets for pulsed laser deposition and thin films resulting from their use, were analyzed by secondary ion mass spectroscopy (SIMS). Negatively charged complex ions bound with oxygen (71Ga16O− and 14N16O−) were found to be the most reliable species with which to evaluate the Ga and N content of ZnO films by clarifying possible mass interference effects in SIMS analysis. Calibrations were carried out to determine the Ga concentration (CGa) and the nitrogen concentration (CN) by normalizing the signal intensities for 71Ga16O− and 14N16O−, respectively, to that for 70Zn16O−. Alternative ablation of pure single crystal and Ga-doped ceramic ZnO targets was found to be effective not only for achieving systematic control of the Ga concentration in ZnO:(Ga,N) films, but also for minimizing the contamination of undesired impurities from the sintered targets. The substrate temperature plays a decisive role in control of CN due to a thermally activated desorption process of N-...