Nitrogen Incorporation Kinetics during the Sublimation Growth of 6H and 4H SiC
Nitrogen Incorporation Kinetics during the Sublimation Growth of 6H and 4H SiC
复制标题
6H 和 4H SiC 升华生长过程中的氮掺入动力学
DOI：
10.1143/jjap.35.2240
复制
发表时间：
1996
影响因子：
1.5
通讯作者：
Masatoshi Kanaya Masatoshi Kanaya
中科院分区：
文献类型：
--
作者：
K. Onoue;T. Nishikawa;M. Katsuno;N. Ohtani;Hirokatsu Yashiro Hirokatsu Yashiro;Masatoshi Kanaya Masatoshi Kanaya
从几个生长参数的角度研究了碳化硅升华孔生长过程中氮的掺入动力学。在6H和4H SiC晶体中大量掺杂氮作为供体。生长速率对掺杂浓度的影响不大，说明在正常生长速率下，氮的掺入不受动力学限制。另一方面，发现表面极性和多型对生长前沿氮的掺入动力学有影响。通过优化生长条件，6H和4H SiC的体电阻率分别低至7.6×10-3 Ω cm和5.3×10-3 Ω cm。
Nitrogen incorporation kinetics during the sublimation boule growth of SiC have been studied in terms of several growth parameters. 6H and 4H SiC crystals were heavily doped with nitrogen as a donor. It was found that the growth rate has little influence on the doping concentration, indicating that nitrogen incorporation is not kinetically limited at normal growth rates in the sublimation growth. On the other hand, surface polarity and polytype were found to influence the nitrogen incorporation kinetics at the growth front. By optimizing the growth conditions, bulk resistivities as low as 7.6×10-3 Ω cm and 5.3×10-3 Ω cm were obtained for 6H and 4H SiC, respectively.