Characterization of MOSFETs intrinsic performance using in-wafer advanced Kelvin-contact device structure for high performance CMOS LSIs
Characterization of MOSFETs intrinsic performance using in-wafer advanced Kelvin-contact device structure for high performance CMOS LSIs
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DOI：
10.1109/icmts.2008.4509331
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发表时间：
2008-03
期刊：
影响因子：
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通讯作者：
R. Kuroda;A. Teramoto;T. Komuro;W. Cheng;S. Watabe;C. Tye;S. Sugawa;T. Ohmi
中科院分区：
文献类型：
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作者：
R. Kuroda;A. Teramoto;T. Komuro;W. Cheng;S. Watabe;C. Tye;S. Sugawa;T. Ohmi
本文提出了一种利用晶圆内开尔文接触器件结构的mosfet表征方法。所开发的方法可以消除mosfet中的寄生串联电阻，使我们能够非常稳定和准确地表征短沟道晶体管的固有电流-电压特性以及寄生串联电阻对器件性能的定量影响。所开发的分析可用于制备mosfet的表征和参数提取，用于超薄栅绝缘体短沟道CMOS lsi的器件/工艺开发和优化，以获得更高的性能。
In this work, a new MOSFETs characterization method utilizing in-wafer Kelvin contact device structure is developed. The developed method can eliminate the parasitic series resistances in MOSFETs and allows us to characterize the short channel transistor intrinsic current- voltage characteristics as well as the quantitative effects of the parasitic series resistance to the device performance, very stably and accurately. The developed analysis is useful for the characterization and parameter extractions of fabricated MOSFETs for the device/process development and optimization of ultra-thin gate insulator short channel CMOS LSIs for higher performance.