Electrical oscillation in SmS induced by constant external voltage
Electrical oscillation in SmS induced by constant external voltage
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恒定外部电压引起的 SmS 电振荡
DOI：
10.1103/physrevb.89.195103
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发表时间：
2014
影响因子：
3.7
通讯作者：
N. K. Sato
中科院分区：
文献类型：
--
作者：
H. Takahashi;R. Okazaki;H. Taniguchi;I. Terasaki;M. Saito;K. Imura;K. Deguchi;N. K. Sato
我们在半导体窄禁带半导体SmS中观察到恒定外电场引起的持续电压振荡。这种振荡出现在几kV/cm的相对低的电场中具有大的非线性传导。我们发现，振荡频率明显的变化，除了一个外部电容器平行的样品，表明振荡不产生焦耳热效应。这种振荡进行了分析的载流子充电-放电模型，这是与电场诱导的绝缘体到金属的过渡，提出在氧化物绝缘体VO。该模型合理地解释了所观察到的振荡现象，这意味着存在一种可能的不稳定性，朝向由电场驱动的导电状态。
We have observed a persistent voltage oscillation induced by constant external electric fields in the nonmagnetic narrow-gap semiconductor SmS. This oscillation appears with a large nonlinear conduction in a relatively low electric field of a few kV/cm. We find that the oscillation frequency clearly changes on addition of an external capacitor parallel to the sample, indicating that the oscillation does not arise from the Joule heating effect. This oscillation is analyzed in terms of a carrier charging-discharging model, which is associated with an electric-field-induced insulator-to-metal transition as proposed in the oxide insulator VO. This model reasonably explains the observed oscillation phenomenon, implying the existence of a possible instability toward a conductive state driven by the electric field.