Tunneling electron transport of silicon nanochains studied by in situ scanning electron microscopy
Tunneling electron transport of silicon nanochains studied by in situ scanning electron microscopy
复制标题
原位扫描电子显微镜研究硅纳米链的隧道电子传输
DOI：
10.1063/1.2403915
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发表时间：
2006
影响因子：
4
通讯作者：
T. Akita
中科院分区：
文献类型：
--
作者：
H. Kohno;S. Takeda;T. Akita
利用原位扫描电子显微镜研究了硅纳米链的电子输运和场发射特性。当阳极与硅纳米链接触时以及当阳极与硅纳米链间隔约1μm时，电流-电压（I-V）特性遵循Fowler-Nordheim定律。这一结果表明，即使当微探针与硅纳米链接触时，场致隧穿电流也占主导地位。
Electron transport and field emission properties of silicon nanochains are studied by in situ scanning electron microscopy at bias voltages up to 120V using a micromanipulator system. The current-voltage (I-V) characteristics follow the Fowler-Nordheim law when the anode is in contact with the silicon nanochains as well as when separated by about 1μm. This result suggests that the field-induced tunneling current is dominant even when the microprobe is in contact with the silicon nanochains.