Chemical control of a molecular spin switch in the presence of a gate
Chemical control of a molecular spin switch in the presence of a gate
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DOI：
10.1039/c3ra43902j
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发表时间：
2013-10
期刊：
影响因子：
3.9
通讯作者：
Mausumi Chattopadhyaya;M. Alam;S. Chakrabarti
中科院分区：
文献类型：
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作者：
Mausumi Chattopadhyaya;M. Alam;S. Chakrabarti
我们预测，双 NO2 取代的 Fe(II) 配合物中的电场诱导的自旋交叉将在栅极电压 VG = -1.04 V 时开始，并且在该临界 VG 上，低自旋态和高自旋态分别表现为“关”和“开”状态，这为实现由栅极控制的电子自旋开关铺平了独特的途径。
We predict that the electric field induced spin-crossover in a double –NO2 substituted Fe(II) complex will commence at the gate voltage, VG = −1.04 V and across this critical VG, the low and high spin states behave as “off” and “on” state, respectively which paves a unique way to realize an electronic spin switch controlled by a gate.