Thermodynamics of impurity elements in solid silicon
Thermodynamics of impurity elements in solid silicon
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DOI：
10.1016/j.jallcom.2009.09.190
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发表时间：
2010-02
影响因子：
6.2
通讯作者：
T. Yoshikawa;Kazuki Morita;S. Kawanishi;Toshihiro Tanaka
中科院分区：
文献类型：
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作者：
T. Yoshikawa;Kazuki Morita;S. Kawanishi;Toshihiro Tanaka
测定固体硅中杂质元素的热力学性质对于控制它们在材料加工过程中掺入或掺杂到硅中具有重要意义。在本文中，我们回顾了在热力学评价之前报道的杂质在硅中的固体溶解度。这些固体溶解度以及固体硅和液态硅熔点处杂质的偏析比被用于热力学分析，以评估固体硅中杂质的多余偏摩尔吉布斯能。测定了15种杂质元素的过量吉布斯能，并讨论了硅中取代杂质引起的晶格应变的影响。
The determination of thermodynamic properties of impurity elements in solid silicon is important to control their incorporation or doping into silicon during materials processing. In this paper, we review the reported solid solubilities of impurities in silicon prior to the thermodynamic evaluation. These solid solubilities as well as the segregation ratios of impurities between solid and liquid silicon at its melting point were used in a thermodynamic analysis to evaluate the excess partial molar Gibbs energy of the impurities in solid silicon. The excess Gibbs energies were determined for 15 impurity elements and we discuss the effect of lattice strain which is caused by the substitutional impurity in silicon.