Theoretical analysis of tunneling current in 4H-SiC Schottky barrier diodes under reverse-biased conditions based on the complex band structure
Theoretical analysis of tunneling current in 4H-SiC Schottky barrier diodes under reverse-biased conditions based on the complex band structure
复制标题
基于复杂能带结构的4H-SiC肖特基势垒二极管反偏条件下隧道电流理论分析
DOI：
10.35848/1347-4065/acaed2
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发表时间：
2023
影响因子：
1.5
通讯作者：
Mori Nobuya
中科院分区：
文献类型：
--
作者：
Murakami Yutoku;Nagamizo Sachika;Tanaka Hajime;Mori Nobuya
