Effect of Film Thickness on Electrical Properties of Chemical Solution Deposition-Derived Pb(ZrxTi1-x)O3/LaNiO3/Si
Effect of Film Thickness on Electrical Properties of Chemical Solution Deposition-Derived Pb(ZrxTi1-x)O3/LaNiO3/Si
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DOI：
10.1143/jjap.46.6925
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发表时间：
2007-10
影响因子：
1.5
通讯作者：
Y. Sakamaki;Hiroaki Fukazawa;N. Wakiya;Hisao Suzuki;K. Shinozaki;T. Ohno;M. Kosec
中科院分区：
文献类型：
--
作者：
Y. Sakamaki;Hiroaki Fukazawa;N. Wakiya;Hisao Suzuki;K. Shinozaki;T. Ohno;M. Kosec
采用化学溶液沉积法（CSD）在准立方相LaNiO 3（LNO）薄膜电极上制备了不同厚度和组分的准同型相界附近的Pb（ZrxTi 1-x）O3（PZT）薄膜，研究了薄膜厚度对PZT薄膜电性能的影响。随着PbZrO 3浓度的增加以及薄膜厚度的增加或薄膜中残余应力的减小，PZT薄膜的晶体对称性从四方晶系变为三方晶系。通过拉曼光谱和X射线衍射测试了不同厚度和成分的PZT薄膜的残余应力和晶格常数。结果，从晶格常数沿沿着a轴和c轴的变化确认了压缩残余应力。此外，残余应力随着膜厚度的减小而增加，这使MPB组合物向富含Zr的组合物移动，这取决于膜厚度。
Pb(ZrxTi1-x)O3 (PZT) thin films with different thicknesses and compositions near the morphotropic phase boundary (MPB) were deposited on a pseudocubic LaNiO3 (LNO) thin film electrode by chemical solution deposition (CSD) in order to elucidate effect of film thickness on the electrical properties of the resultant PZT thin films. The crystal symmetry of the resultant PZT thin films changed from tetragonal to rhombohedral with increasing PbZrO3 concentration as well as with increasing film thickness or decreasing residual stress in the film. The residual stress and the lattice constants were measured by Raman spectroscopy and from X-ray diffraction patterns of the PZT thin films with different thicknesses and compositions, respectively. As a result, compressive residual stress was confirmed from the change in the lattice constants along a- and c-axes. In addition, residual stress increased with decreasing film thickness, which shifted the MPB composition toward the Zr-rich composition, depending on the film thickness.