Atomistic-Scale Simulations of the Graphene Growth on a Silicon Carbide Substrate Using Thermal Decomposition and Chemical Vapor Deposition
Atomistic-Scale Simulations of the Graphene Growth on a Silicon Carbide Substrate Using Thermal Decomposition and Chemical Vapor Deposition
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DOI：
10.1021/acs.chemmater.0c02121
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发表时间：
2020-09
影响因子：
8.6
通讯作者：
Weiwei Zhang;A. V. van Duin
中科院分区：
文献类型：
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作者：
Weiwei Zhang;A. V. van Duin
原子级石墨烯生长的分子动力学研究可以为理解石墨烯的生长机理提供有价值的见解，有助于优化合成石墨烯的生长条件。
Molecular dynamics (MD) studies of graphene growth at atomistic level can provide valuable insight for understanding its growth mechanism, which is helpful to optimize the growth conditions for syn...