Density behaviors of Ge nanodots self-assembled by ion beam sputtering deposition
Density behaviors of Ge nanodots self-assembled by ion beam sputtering deposition
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DOI：
10.1088/1674-1056/22/5/058104
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发表时间：
2013-05
影响因子：
1.7
通讯作者：
F. Xiong;Tao Yang;Zhaoning Song;Peizhi Yang
中科院分区：
文献类型：
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作者：
F. Xiong;Tao Yang;Zhaoning Song;Peizhi Yang
通过离子束溅射沉积制备了面数密度高达2.33×1010 cm−2、长径比大于0.12的自组装Ge纳米点。点密度是沉积速率和 Ge 覆盖率的函数，观察到主要受到从二维前体到三维岛的转变的限制，并且与岛的附着和分离的吸附原子行为有关。当溅射沉积中采用高离子能量时，纳米点密度的温度依赖性也显着增加，并且表明与超应变润湿层的破坏有关。这一结果归因于高能原子和生长表面之间的相互作用，它介导了岛形核。
Self-assembled Ge nanodots with areal number density up to 2.33 × 1010 cm−2 and aspect ratio larger than 0.12 are prepared by ion beam sputtering deposition. The dot density, a function of deposition rate and Ge coverage, is observed to be limited mainly by the transformation from two-dimensional precursors to three-dimensional islands, and to be associated with the adatom behaviors of attachment and detachment from the islands. An unusual increasing temperature dependence of nanodot density is also revealed when a high ion energy is employed in sputtering deposition, and is shown to be related to the breaking down of the superstrained wetting layer. This result is attributed to the interaction between energetic atoms and the growth surface, which mediates the island nucleation.