Nonlinear screening and ballistic transport in a graphene p-n junction
Nonlinear screening and ballistic transport in a graphene p-n junction
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DOI：
10.1103/physrevlett.100.116804
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发表时间：
2008-03-21
影响因子：
8.6
通讯作者：
Fogler, M. M.
中科院分区：
文献类型：
--
作者：
Zhang, L. M.;Fogler, M. M.
我们研究了石墨烯中静电产生的横向p-n结的电荷密度分布、电场分布和电阻。结果表明，由于狄拉克准粒子的屏蔽能力有限，电子和空穴区交界处的电场得到了极大的增强。因此，结电阻比以前文献中估计的要低。
We study the charge density distribution, the electric field profile, and the resistance of an electrostatically created lateral p-n junction in graphene. We show that the electric field at the interface of the electron and hole regions is strongly enhanced due to limited screening capacity of Dirac quasiparticles. Accordingly, the junction resistance is lower than estimated in previous literature.