Efficient Thermally Evaporated Perovskite Light-Emitting Devices via a Bilateral Interface Engineering Strategy
Efficient Thermally Evaporated Perovskite Light-Emitting Devices via a Bilateral Interface Engineering Strategy
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通过双边界面工程策略实现高效热蒸发钙钛矿发光器件
DOI：
10.1021/acs.jpclett.1c01592
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发表时间：
2021
影响因子：
5.7
通讯作者：
Hu Yongsheng
中科院分区：
文献类型：
--
作者：
Song Li;Huang Lixin;Liu Yuan;Guo Xiaoyang;Geng Chong;Xu Shu;Xia Yuanqin;Zhang Yuan;Luan Nannan;Hu Yongsheng
物理气相沉积已经成为高效和稳定的全无机钙钛矿发光器件（PeLED）的一种有前途的策略。然而，由于大量的非辐射缺陷，热蒸发PeLED仍然具有不令人满意的光电性能。在此，我们展示了一种有效的双边界面缺陷钝化策略，以高性能PeLED与热沉积CsPbBr 3发射层（EML）。具体而言，通过分别实施3-氨基-1-丙醇（3AP）-改性的PEDOT：PSS和引入铵盐，来自本体以及EML/电荷传输层（CTL）界面的非辐射缺陷被显著抑制。同时，3AP诱导的低导电Cs4 PbBr 6和铵盐都可以有效地平衡电荷注入EML。结果，我们实现了基于热蒸发CsPbBr 3的高效PeLED，亮度为15745 cd/m2，电流效率为32 cd/A，外量子效率为8.86%，寿命为3.74 h。本文提出的策略可以为高效热蒸发PeLED的开发提供参考。
Physical vapor deposition has emerged as a promising strategy for efficient and stable all-inorganic perovskite light-emitting devices (PeLEDs). However, the thermally evaporated PeLEDs still suffer from unsatisfactory optoelectrical performance because of the massive nonradiative defects. Herein, we demonstrate an efficient bilateral interfacial defect-passivation strategy toward high-performance PeLEDs with a thermally deposited CsPbBr3emissive layer (EML). Specifically, the nonradiative defects from the bulk as well as the EML/charge transport layer (CTL) interface are significantly suppressed by implementing the 3-amino-1-propanol (3AP)-modified PEDOT:PSS and introducing ammonium salts, respectively. Simultaneously, both the 3AP induced less-conductive Cs4PbBr6and ammonium salts can balance the charge injection into the EML effectively. As a result, we achieved efficient PeLEDs based on thermally evaporated CsPbBr3with a luminance of 15745 cd/m2, current efficiency of 32 cd/A, external quantum efficiency of 8.86%, and lifetime of 3.74 h. The strategy proposed here may shed light on the development of highly efficient thermally evaporated PeLEDs.