Measurements of the atomistic mechanics of single crystalline silicon wires of nanometer width
Measurements of the atomistic mechanics of single crystalline silicon wires of nanometer width
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DOI：
10.1103/physrevb.72.035333
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发表时间：
2005-07
影响因子：
3.7
通讯作者：
T. Kizuka;Yasuhiro Takatani;K. Asaka;R. Yoshizaki
中科院分区：
文献类型：
--
作者：
T. Kizuka;Yasuhiro Takatani;K. Asaka;R. Yoshizaki
采用原子力显微镜和高分辨电子显微镜/扫描探针显微镜相结合的方法，研究了纳米针尖接触连续回缩法制备的纳米宽度硅丝的拉伸变形行为。基于原子尺度下的材料力学，研究了单根硅纳米线的弹性极限、杨氏模数和强度。结果表明，杨氏模数和强度分别提高到$18\ifmmod\Pm\Else\TextPM\FI和$5.0\ifmmode\pm\else\textpm\fi{}0.3\phantom{\rule{0.3em}{0ex}}\mathrm{GPa}$，。弹性极限为$0.10\ifmmod\pm\Else\TextPM\FI 0.02$，断裂应变估计为$0.30\ifmmod\PM\Else\TextPM\FI 0.01$。实验结果表明，硅线的力学性能随着尺寸从微米级到纳米级的减小而发生变化。
Tensile deformation behavior of silicon (Si) wires with nanometer widths, synthesized by nanometer-tip contact and successive retraction, was studied by atomistic combined microscopy of high-resolution transmission electron microscopy/scanning probe microscopy. The elastic limit, Young's modulus, and strength of individual Si nanowires were investigated based on the mechanics of materials at an atomic scale. It was found that both Young's modulus and strength increased to $18\ifmmode\pm\else\textpm\fi{}2$ and $5.0\ifmmode\pm\else\textpm\fi{}0.3\phantom{\rule{0.3em}{0ex}}\mathrm{GPa}$, respectively. The elastic limit was $0.10\ifmmode\pm\else\textpm\fi{}0.02$ and fracture strain was estimated to be $0.30\ifmmode\pm\else\textpm\fi{}0.01$. Experimental results show that mechanical properties of Si wires transform due to size reduction from micrometer to nanometer scale.