Characterizing an implanted Si/Si p–n junction with lower doping level by combined electron holography and focused-ion-beam milling
Characterizing an implanted Si/Si p–n junction with lower doping level by combined electron holography and focused-ion-beam milling
复制标题
通过组合电子全息术和聚焦离子束铣削表征具有较低掺杂水平的注入 Si/Si p-n 结
DOI：
10.1063/1.1491606
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发表时间：
2002
影响因子：
4
通讯作者：
H. Saka
中科院分区：
文献类型：
--
作者：
Zhouguang Wang;T. Kato;N. Shibata;T. Hirayama;N. Kato;K. Sasaki;H. Saka
具有非常低掺杂水平的Si/Si p-n结经由标准器件制造工艺通过将25 keV的As离子注入到具有1015 cm-3的硼浓度的p型Si衬底中，随后在1035 °C下热退火33 s来制造。 为了表征这种结，通过聚焦离子束铣削同时制备了一对45°楔形横截面，并使用离轴电子全息术进行了检查。重建的相位图像清楚地显示了由跨p-n结的静电势降引起的相移，表明结已被成功映射。从相位图像的定量测量给出的电势值分别为12.21±0.40和11.50±0.27 V，对于结的n-和p-型侧，跨结的电势降为0.71±0.05 V，总电死层厚度为50.10±3.88 nm。这项工作表明，电子全息术是一个强大的技术，用于表征低掺杂水平的p-n结…
A Si/Si p–n junction with very low doping level was made via a standard device fabrication process by implanting As ions at 25 keV into a p-type Si substrate with a boron concentration of 1015 cm−3, followed by heat annealing at 1035 °C for 33 s. To characterize this junction, a pair of 45° wedge-shape cross sections was prepared simultaneously by focused-ion-beam milling and examined using off-axis electron holography. The reconstructed phase images clearly show the phase shift induced by the electrostatic potential drop across the p–n junction, indicating that the junction has been mapped successfully. Quantitative measurements from the phase images give the potential values of 12.21±0.40 and 11.50±0.27 V, respectively, for the n- and p-type sides of the junction, 0.71±0.05 V for the potential drop across the junction and 50.10±3.88 nm for the total electric dead layer thickness. This work demonstrates that electron holography is a powerful technique for characterizing low dopant level p–n junctions in ...