Crystal structure, thermal expansion and electrical properties of a new compound Al0.33DyGe2
Crystal structure, thermal expansion and electrical properties of a new compound Al0.33DyGe2
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DOI：
10.1016/j.matlet.2008.07.036
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发表时间：
2008-11
影响因子：
3
通讯作者：
Pingli Qin;Ye Chen;Hongrui Liu;Wei He;Liangqin Nong;L. Zeng
中科院分区：
文献类型：
--
作者：
Pingli Qin;Ye Chen;Hongrui Liu;Wei He;Liangqin Nong;L. Zeng
合成了一种新的三元化合物Al 0.33DyGe 2，并用X射线粉末衍射技术研究了其在298 ~ 773 K温度范围内的结构。用Rietveld方法对Al_（0.33）DyGe_2晶体结构进行了细化。三元化合物Al_（0.33）DyGe_（2）为缺陷型CeNiSi_（2）结构的正交晶系（空间群Cmcm，a=0.41018（2）nm，B=1.62323（6）nm，c=0.39463（1）nm，Z=4，Dcalc=8.004 g/cm ~ 3）。Al0.33DyGe2的平均热膨胀系数αa、α带α c分别为1.96×10− 5 K −1、0.93×10− 5 K − 1和1.42×10− 5 K −1。体积热膨胀系数α维斯为4.31×10− 5 K −1。在室温和25 K之间，观察到电阻率从387下降到308 µΩ cm。
A new ternary compound Al0.33DyGe2has been synthesized and studied from 298 K to773 K by means of X-ray powder diffraction technique. The crystal structural refinement of Al0.33DyGe2has been performed by using the Rietveld method. The ternary compound Al0.33DyGe2crystallizes in the orthorhombic of the defect CeNiSi2-type structure (space group Cmcm, a=0.41018(2)nm, b=1.62323(6)nm, c=0.39463(1)nm, Z=4 and Dcalc=8.004 g/cm3). The average thermal expansion coefficients αa, αband αcof Al0.33DyGe2are 1.96×10−5K−1, 0.93×10−5K−1and 1.42×10−5K−1, respectively. The bulk thermal expansion coefficient αVis 4.31×10−5K−1. The resistivity is observed to fall from 387 to 308 µΩ cm between room temperature and 25 K.