The relative importance of domain size, domain purity and domain interfaces to the performance of bulk-heterojunction organic photovoltaics
The relative importance of domain size, domain purity and domain interfaces to the performance of bulk-heterojunction organic photovoltaics
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DOI：
10.1039/c2ee21327c
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发表时间：
2012-06-01
影响因子：
32.5
通讯作者：
Groves, Chris
中科院分区：
文献类型：
--
作者：
Lyons, Benjamin P.;Clarke, Nigel;Groves, Chris
通过使用Cahn-Hilliard建模可控地改变本体异质结的域尺寸、域纯度和域之间的界面宽度，并且使用Monte Carlo建模预测它们对OPV性能的相对影响。据发现，局部尖锐，良好连接的域只有4 nm的范围内执行的形态与加宽的接口和/或不纯的域，即使域的大小是在“最佳”的大小类似于10 nm。更一般地说，这些数据提供了最有效的方法来优化铸态本体异质结形态取决于初始域纯度和域之间的界面的性质的信息。此外，它表明为什么形态优化是更有效的一些共混物比其他。结果表明，共混物的淬灭深度可以作为一种通用的技术来控制形态的界面结构，实现短路光电流的大幅增加。
The domain size, domain purity and interfacial width between domains for a bulk heterojunction are controllably altered through use of Cahn-Hilliard modeling and their relative effect on OPV performance is predicted using Monte Carlo modeling. It is found that locally sharp, well-connected domains of only 4 nm extent out perform morphologies with broadened interfaces and/or impure domains even when domain sizes were at the 'optimum' size of similar to 10 nm. More generally, these data provide information on the most effective method to optimize the as-cast bulk heterojunction morphology depending upon initial domain purity and the nature of interfaces between domains. Further, it indicates why morphology optimization is more effective for some blends than others. It is shown that the quench depth of the blend can be used as a general technique to control the interfacial structure of the morphology and realize substantial increases in short circuit photocurrent.