Visible-blind photodetector based on p-i-n junction GaN nanowire ensembles
Visible-blind photodetector based on p-i-n junction GaN nanowire ensembles
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DOI：
10.1088/0957-4484/21/31/315201
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发表时间：
2010-08-06
期刊：
影响因子：
3.5
通讯作者：
Tu, Li-Wei
中科院分区：
文献类型：
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作者：
Bugallo, Andres de Luna;Tchernycheva, Maria;Tu, Li-Wei
我们报道了一种基于p-i-n结GaN纳米线集成的可见盲光电探测器的合成、制备和广泛的表征。纳米线是通过等离子体辅助分子束外延生长在n掺杂Si（111）衬底上，封装到旋涂玻璃中，并使用干法蚀刻和金属化技术进行处理。该检测器在-1 V时具有0.47 A W（-1）的高峰响应度。检测器的光谱响应限于UV范围，UV-可见光抑制比为2 x 10（2）。讨论了入射光功率和光电探测器工作速度的关系。
We report the synthesis, fabrication and extensive characterization of a visible-blind photodetector based on p-i-n junction GaN nanowire ensembles. The nanowires were grown by plasma-assisted molecular beam epitaxy on an n-doped Si(111) substrate, encapsulated into a spin-on-glass and processed using dry etching and metallization techniques. The detector presents a high peak responsivity of 0.47 A W(-1) at -1 V. The spectral response of the detector is restricted to the UV range with a UV-to-visible rejection ratio of 2 x 10(2). The dependence on the incident power and the operation speed of the photodetector are discussed.