A SiGe Monolithically Integrated 278 GHz Push-Push Oscillator
A SiGe Monolithically Integrated 278 GHz Push-Push Oscillator
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SiGe 单片集成 278 GHz 双推振荡器
DOI：
10.1109/mwsym.2007.380420
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
P. Russer
中科院分区：
文献类型：
--
作者：
R. Wanner;R. Lachner;G. Olbrich;P. Russer
在本文中，我们提出了一个完全单片集成的J波段推挽振荡器。该器件采用接近生产的SiGe：C双极技术制造。在这项工作中使用的晶体管示出了最大渡越频率fT = 200 GHz和最大振荡频率fmax = 275 GHz。无源电路由集成传输线元件、MIM电容和TaN电阻实现。输出信号的频率可以在275.5 GHz和279.6 GHz之间调谐。该振荡器给出了迄今为止发表的基于晶体管的振荡器的最高输出频率。
In this paper we present a fully monolithically integrated J-band push-push oscillator. The device is fabricated in a production-near SiGe:C bipolar technology. The transistors used in this work show a maximum transit frequency fT = 200 GHz and a maximum frequency of oscillation fmax = 275 GHz. The passive circuitry is realized by integrated transmission-line components, MIM-capacitors and TaN resistors. The frequency of the output signal can be tuned between 275.5 GHz and 279.6 GHz. This oscillator gives the highest output frequency for transistor based oscillators published up to now.