Electrical characteristics of 8-/spl Aring/ EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions
Electrical characteristics of 8-/spl Aring/ EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions
复制标题
具有固相外延再生长结的 8-/spl Aring/ EOT HfO/sub 2//TaN 低热预算 n 沟道 FET 的电气特性
DOI：
10.1109/ted.2006.876274
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发表时间：
2006
影响因子：
3.1
通讯作者：
M. Heyns
中科院分区：
文献类型：
--
作者：
L. Ragnarsson;S. Severi;L. Trojman;K.D. Johnson;D. Brunco;M. Aoulaiche;M. Houssa;T. Kauerauf;R. Degraeve;A. Delabie;V. Kaushik;S. De Gendt;W. Tsai;G. Groeseneken;K. Meyer;M. Heyns
The authors demonstrate high-performing n-channel transistors with a HfO2/TaN gate stack and a low thermal-budget process using solid-phase epitaxial regrowth of the source and drain junctions. The thinnest devices have an equivalent oxide thickness (EOT) of 8 Aring, a leakage current of 1.5 A/cm2 at VG=1 V, a peak mobility of 190 cm2/Vmiddots, and a drive-current of 815 muA/mum at an off-state current of 0.1 muA/mum for VDD=1.2 V. Identical gate stacks processed with a 1000-degC spike anneal have a higher peak mobility at 275 cm2/Vmiddots, but a 5-Aring higher EOT and a reduced drive current at 610 muA/mum. The observed performance improvement for the low thermal-budget devices is shown to be mostly related to the lower EOT. The time-to-breakdown measurements indicate a maximum operating voltage of 1.6 V (1.2 V at 125 degC) for a ten-year lifetime, whereas positive-bias temperature-instability measurements indicate a sufficient lifetime for operating voltages below 0.75 V
