Observation of surface defects in 6H-SiC wafers
Observation of surface defects in 6H-SiC wafers
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6H-SiC 晶圆表面缺陷观察
DOI：
10.1063/1.354269
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发表时间：
1993
期刊：
影响因子：
--
通讯作者：
W. Mitchel
中科院分区：
文献类型：
--
作者：
A. Evwaraye;S. R. Smith;M. Skowronski;W. Mitchel
在市售的单晶6H - SiC材料中观察到宽峰。样品为氮掺杂，n型，自由载流子浓度（ND−NA）为1.3×1018 cm−3，由电容电压（C‐V）测量确定。缺陷浓度谱图表明，该缺陷具有一定的空间局域性，在半导体-金属界面处570 a处最大浓度为2.5×1014 cm−3。在VR= - 7 V时，活化能从Ec−0.40 eV变化到VR= - 5 V时的Ec−0.54 eV。这可以用普尔-弗伦克尔效应来定性地解释。通过生长和随后去除氧化层来去除缺陷。因此，我们得出结论，该缺陷是由抛光过程中的残余损伤引起的。
A broad peak was observed in commercially available single‐crystal 6H‐SiC material. The samples were nitrogen doped, n type with free carrier concentration (ND−NA) of 1.3×1018 cm−3 that was determined from capacitance‐voltage (C‐V) measurements. The defect concentration profile showed that the defect was spatially localized and had a maximum concentration of 2.5×1014 cm−3 at 570 A from the semiconductor‐metal interface. The activation energy varied with applied voltage from Ec−0.40 eV at VR=−7 V to Ec−0.54 eV at VR=−5 V. This can be explained qualitatively in terms of the Poole–Frenkel effect. The defect was removed by the growth and subsequent removal of an oxide layer. Therefore, we conclude that the defect was caused by residual damage from the polishing process.