Effects of Hydrogen Incorporation on Mg Diffusion in GaN‐Doped with Mg Ions via Ultra‐High‐Pressure Annealing
Effects of Hydrogen Incorporation on Mg Diffusion in GaN‐Doped with Mg Ions via Ultra‐High‐Pressure Annealing
复制标题
超高压退火掺氢对镁离子掺杂 GaN 中镁扩散的影响
DOI：
10.1002/pssb.202200235
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
Kachi Tetsu
中科院分区：
文献类型：
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作者：
Narita Tetsuo;Uedono Akira;Kachi Tetsu
使用各种Mg剂量和退火持续时间在1300 °C下在500 MPa的氮气下评估氮化镓（GaN）中的镁（Mg）扩散。低镁剂量（3 × 1013 cm − 2）导致扩散，扩散系数为1.36 × 10− 14 cm 2s −1。在退火过程中，周围的氢原子也被引入到试样中。氢具有比Mg大的扩散系数，但是氢浓度受到表面Mg浓度的限制。氢原子到达Mg扩散前沿后，通过形成Mg-氢络合物促进Mg的扩散。在高于1014 cm − 2的较高Mg剂量下，Mg的扩散速度更快，这可以通过涉及空位和氢的扩散物种来解释。
Magnesium (Mg) diffusion in gallium nitride (GaN) is assessed using various Mg dosages and annealing durations at 1300 °C under nitrogen at 500 MPa. Low Mg dosages of 3 × 1013cm−2result in diffusion based on Fick's law and a diffusion coefficient of 1.36 × 10−14cm2s−1. Ambient hydrogen atoms are also introduced into the specimens during annealing. Hydrogen has a larger diffusion coefficient than Mg but the hydrogen concentration is limited by the surface Mg concentration. After hydrogen atoms reach the Mg diffusion front, they enhance Mg diffusion by forming the Mg–hydrogen complexes. The more rapid Mg diffusion at higher Mg dosages above 1014cm−2can be explained by diffusive species involving vacancies and hydrogen.