Temperature-Dependent Site Control of InAs/GaAs (001) Quantum Dots Using a Scanning Tunneling Microscopy Tip During Growth.
Temperature-Dependent Site Control of InAs/GaAs (001) Quantum Dots Using a Scanning Tunneling Microscopy Tip During Growth.
复制标题
DOI：
10.1007/s11671-010-9802-z
复制
发表时间：
2010-10-20
影响因子：
--
通讯作者：
Tsukamoto, Shiro
中科院分区：
文献类型：
--
作者：
Toujyou, Takashi;Tsukamoto, Shiro
Site-controlled InAs nano dots were successfully fabricated by a STMBE system (in situ scanning tunneling microscopy during molecular beam epitaxy growth) at substrate temperatures from 50 to 430°C. After 1.5 ML of the InAs wetting layer (WL) growth by ordinal Stranski–Krastanov dot fabrication procedures, we applied voltage at particular sites on the InAs WL, creating the site where In atoms, which were migrating on the WL, favored to congregate. At 240°C, InAs nano dots (width: 20–40 nm, height: 1.5–2.0 nm) were fabricated. At 430°C, InAs nano dots (width: 16–20 nm, height: 0.75–1.5 nm) were also fabricated. However, these dots were remained at least 40 s and collapsed less than 1000 s. Then, we fabricated InAs nano dots (width: 24–150 nm, height: 2.8–28 nm) at 300°C under In and As4 irradiations. These were not collapsed and considered to high crystalline dots.
登录
查看更多内容
影响因子：
3.2
作者：
Okada, Yoshitaka;Oshima, Ryuji;Takata, Ayami
通讯作者：
Takata, Ayami
DOI：
10.1143/jjap.45.l777
发表时间：
2006-08-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
影响因子：
--
作者：
Honma, Tsuyoshi;Tsukamoto, Shiro;Arakawa, Yasuhiko
通讯作者：
Arakawa, Yasuhiko
影响因子：
1.8
作者：
Steimetz, E;Wehnert, T;Richter, W
通讯作者：
Richter, W
影响因子：
1.4
作者：
Steimetz, E;Zettler, JT;Sobiesierski, Z
通讯作者：
Sobiesierski, Z
DOI：
10.1016/j.physe.2007.09.130
发表时间：
2008-04-01
影响因子：
3.3
作者：
Mehta, M.;Reuter, D.;Remhof, A.
通讯作者：
Remhof, A.