Comprehensive study of the resistance switching in SrTiO3 and Nb-doped SrTiO3
Comprehensive study of the resistance switching in SrTiO3 and Nb-doped SrTiO3
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SrTiO3 和 Nb 掺杂 SrTiO3 电阻切换的综合研究
DOI：
10.1063/1.3569586
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发表时间：
2011-03-21
影响因子：
4
通讯作者：
Yang, J. B.
中科院分区：
文献类型：
--
作者：
Chen, X. G.;Ma, X. B.;Yang, J. B.
我们已经证明，电阻切换（RS）效应可以通过改变 Ag/SrTiO3 和 Ag/Nb 掺杂的 SrTiO3(Nb:STO) 结构中的电极配置和载流子密度来控制。金属/Nb:STO中肖特基结的消除完全破坏了RS效应，这表明RS效应源于金属/Nb:STO界面处形成的类肖特基势垒的修饰。整流 I-V 曲线表明电阻的变化归因于界面处载流子的捕获或去捕获。载流子密度在RS效应的测定中起着重要作用。 SrTiO3 中 RS 的存在需要适当的掺杂水平，以便为界面处捕获载流子提供条件。
We have demonstrated that the resistance switching (RS) effect can be controlled by the modification of the electrode configurations and the carrier densities in the Ag/SrTiO3 and Ag/Nb-doped SrTiO3(Nb:STO) structures. The elimination of the Schottky junction in the metal/Nb:STO completely destroys the RS effect, which suggests that the RS effect originates from the modification of Schottky-like barrier formed at the interface of metal/Nb:STO. The rectifying I-V curves revealed that the change in resistance was attributed to the trapping or detrapping carriers at the interface. The carrier density plays an important role in the determination of RS effect. The presence of the RS in SrTiO3 requires an appropriate doping level to provide conditions for trapping carriers at the interface.