Spin Transport in Nondegenerate Si with a Spin MOSFET Structure at Room Temperature
Spin Transport in Nondegenerate Si with a Spin MOSFET Structure at Room Temperature
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DOI：
10.1103/physrevapplied.2.034005
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发表时间：
2014-09-10
影响因子：
4.6
通讯作者：
Shiraishi, Masashi
中科院分区：
文献类型：
--
作者：
Sasaki, Tomoyuki;Ando, Yuichiro;Shiraishi, Masashi
非简并半导体中的自旋输运有望为自旋晶体管、自旋逻辑器件和可重构逻辑电路的产生铺平道路，因为Si中的室温（RT）自旋输运已经实现。然而，RT自旋输运已被限制到简并Si，这使得难以产生基于自旋的信号，因为栅极电场不能用于操纵这样的信号。在这里，我们报告的自旋输运在非简并硅自旋金属氧化物半导体场效应晶体管（MOSFET）结构的实验演示。我们成功地观察到Hanle型自旋进动信号的调制，这是非简并半导体中的特征自旋动力学。我们获得了超过20 μ m的长自旋运输和自旋旋转大于4 π在RT。我们还观察到栅极诱导调制的自旋运输信号在RT。自旋扩散长度作为门电压的函数的调制被成功地观察到，我们归因于Elliott-Yafet自旋弛豫机制。这些成果有望导致实际的Si基自旋MOSFET的创建。
Spin transport in nondegenerate semiconductors is expected to pave the way to the creation of spin transistors, spin logic devices, and reconfigurable logic circuits, because room-temperature (RT) spin transport in Si has already been achieved. However, RT spin transport has been limited to degenerate Si, which makes it difficult to produce spin-based signals because a gate electric field cannot be used to manipulate such signals. Here, we report the experimental demonstration of spin transport in non-degenerate Si with a spin metal-oxide-semiconductor field-effect transistor (MOSFET) structure. We successfully observe the modulation of the Hanle-type spin-precession signals, which is a characteristic spin dynamics in nondegenerate semiconductors. We obtain long spin transport of more than 20 mu m and spin rotation greater than 4 pi at RT. We also observe gate-induced modulation of spin-transport signals at RT. The modulation of the spin diffusion length as a function of a gate voltage is successfully observed, which we attribute to the Elliott-Yafet spin relaxation mechanism. These achievements are expected to lead to the creation of practical Si-based spin MOSFETs.