Integration of a rapid scanning technique into THz time-domain spectrometers for nonlinear THz spectroscopy measurements
Integration of a rapid scanning technique into THz time-domain spectrometers for nonlinear THz spectroscopy measurements
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DOI：
10.1063/1.5080653
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发表时间：
2019-03-01
期刊：
影响因子：
1.6
通讯作者：
Havenith, M.
中科院分区：
文献类型：
--
作者：
Hoberg, C.;Balzerowski, P.;Havenith, M.
我们已经实现了一种快速扫描技术到太赫兹时域光谱仪使用振荡无摩擦延迟线，特别是适用于非线性太赫兹实验。因此，我们能够在40至200 cm（-1）的频率范围内将THz测量的动态范围增加高达24 dB，并将扫描时间减少高达200倍。我们在这里报告的TDS设置在80 MHz和5 kHz的重复率的测试测量。动态范围超过64 dB，这允许记录太赫兹吸收时，太赫兹探针的光激发，覆盖的频率范围内的分子间模式和声子带的微小变化。我们证明了这种技术的潜力，使用70 μ m厚的高电阻率硅，激发400 nm，类似于50 fs脉冲作为样品的光泵太赫兹探测实验。(C)2019年作者。
We have implemented a rapid scanning technique into THz time domain spectrometers using an oscillating frictionless delay line, especially adapted for nonlinear THz experiments. Thereby we were able to increase the dynamic range of THz measurements in the frequency range from 40 to 200 cm(-1) by up to 24 dB and reduce the scanning time by up to a factor of 200. We report here test measurements on TDS-setups at repetition rates of 80 MHz and 5 kHz. The dynamic range exceeds 64 dB, which allows to record even small changes in the THz absorption upon optical excitation by a THz probe, covering the frequency range of the intermolecular modes and the phonon bands. We demonstrate the potential of this technique for optical-pump THz-probe experiments using a 70 mu m thick high-resistivity silicon, excited by 400 nm, similar to 50 fs pulses as a sample. (C) 2019 Author(s).