Spectral features in different sized InGaN/GaN micropyramids

Spectral features in different sized InGaN/GaN micropyramids
复制标题

不同尺寸 InGaN/GaN 微金字塔的光谱特征

DOI：
--
复制
发表时间：
2011
期刊：
影响因子：
--
通讯作者：
P. Michler
P. Michler
中科院分区：
--
文献类型：
--
作者：
C. Wächter;Alexander M Meyer;S. Metzner;M. Jetter;F. Bertram;J. Christen;P. Michler

文献摘要

被引文献

相似文献

通过选择性金属有机气相外延（MOVPE）沉积金字塔GaN结构以产生半极性面。在这些金字塔的顶部沉积InGaN作为有源区。我们已经研究了这些金字塔的发射特性，使用低温时间分辨光致发光（PL）和阴极发光（CL）光谱。 观察到的PL光谱显示，改变金字塔的大小和铟供应导致的合奏的发射波长的变化。空间分辨阴极射线发光（CL）实验进行了本地分析的发射特性的所有金字塔结构。我们已经发现，对于小金字塔和高铟流，铟聚集在金字塔的边缘和顶点。（© 2011 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
Pyramidal GaN structures were deposited by selective metal-organic vapor phase epitaxy (MOVPE) to create semipolar facets. On top of these pyramids InGaN was deposited as active region. We have studied the emission properties of these pyramids using low-temperature time-resolved photoluminescence (PL) and cathodoluminescence (CL) spectroscopy. The observed PL spectra revealed that changing the size of the pyramids and the Indium supply leads to variations in the emission wavelength of the ensemble. Spatially resolved cathodoluminescence (CL) experiments were performed to analyze locally the emission properties all over the pyramidal structures. We have found that the Indium accumulates at the edges and the apex of the pyramids for small pyramids and high Indium flows. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)